In-situ characterisation of the oxygen induced changes in a UHV grown organic light-emitting diode

Citation
M. Murgia et al., In-situ characterisation of the oxygen induced changes in a UHV grown organic light-emitting diode, SYNTH METAL, 102(1-3), 1999, pp. 1095-1096
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
1095 - 1096
Database
ISI
SICI code
0379-6779(199906)102:1-3<1095:ICOTOI>2.0.ZU;2-R
Abstract
The in-situ electroluminescence and current voltage characteristics of orga nic light emitting diode deposited in UHV has been observed. Ultra High Vac uum (UHV) allows to study the system in a clean environment and to monitor in situ the effect of degradation associated with oxidizing agents when tho se are introduced in the chamber under controlled conditions. Furthermore t he changes in the i-v characteristics upon oxygen exposure are reported pro ving the degradation even at low oxygen partial pressures (<10(-8) mbar) as well as changes in depth and distribution of the trap states. The results also confirm the p-doping effect over the whole investigated field range.