M. Murgia et al., In-situ characterisation of the oxygen induced changes in a UHV grown organic light-emitting diode, SYNTH METAL, 102(1-3), 1999, pp. 1095-1096
The in-situ electroluminescence and current voltage characteristics of orga
nic light emitting diode deposited in UHV has been observed. Ultra High Vac
uum (UHV) allows to study the system in a clean environment and to monitor
in situ the effect of degradation associated with oxidizing agents when tho
se are introduced in the chamber under controlled conditions. Furthermore t
he changes in the i-v characteristics upon oxygen exposure are reported pro
ving the degradation even at low oxygen partial pressures (<10(-8) mbar) as
well as changes in depth and distribution of the trap states. The results
also confirm the p-doping effect over the whole investigated field range.