Dependence of the hole-injection barrier on the hole conductor in organic light emitting diodes based on composites

Citation
M. Gross et al., Dependence of the hole-injection barrier on the hole conductor in organic light emitting diodes based on composites, SYNTH METAL, 102(1-3), 1999, pp. 1147-1148
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
1147 - 1148
Database
ISI
SICI code
0379-6779(199906)102:1-3<1147:DOTHBO>2.0.ZU;2-Y
Abstract
Organic light-emitting diodes based on composites using different hole cond uctors were fabricated and characterized. In these devices the current flux is limited by the injection of holes into the semi-conducting polymer laye r through tunneling. The data were evaluated using the common Fowler-Nordhe im formalism. The barrier height was found to depend linearly on the oxidat ion potential of the hole conductor, but unexpectedly the slope is only 0.5 5 +/- 0.1. This result is explained by the non-polar nature of the internal interface between ITO and the conductive layer.