Imaging of electrical features in organic thin films by scanning Maxwell-stress microscopy

Citation
Hk. Shin et al., Imaging of electrical features in organic thin films by scanning Maxwell-stress microscopy, SYNTH METAL, 102(1-3), 1999, pp. 1579-1580
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
1579 - 1580
Database
ISI
SICI code
0379-6779(199906)102:1-3<1579:IOEFIO>2.0.ZU;2-S
Abstract
The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electr ic force microscopy that allows simultaneous access to the electrical prope rties of molecular system such as surface potential, surface charge, dielec tric constant and conductivity along with the topography. Here we report ou r recent results of its application to nanoscopic study of domain structure s and electrical functionality in organic thin films prepared by the Langmu ir-Blodgett technique.