Film formation of polyacenic semiconductive materials (PAS) by excimer laser ablation

Polyacenic semiconductor (PAS) thin films (PAS-F) were prepared onto variou s substrates at several substrate temperatures (T-s) by excimer laser ablat ion (ELA) of a bulk phenol-form-aldehyde (PF) resin and/or bulk PAS materia ls prepared by pyrolysis of the PF resin at several pyrolytic temperatures (T-p). Every PAS-F prepared by ELA was homogeneous dark brown, consisting o f fine particles. Remarkable increase of electric conductivities was achiev ed on increasing T-s during the film formation process for every PAS-F. In particular, the conductivity of the film from PAS with T-p Of 935 degrees C prepared on a substrate at T-s of 300 degrees C (PAS-F(935, 300)) reached more than 10(1)Scm(-1). Although iodine doping was not possible after film formation process, effective iodine doping during formation process of PAS- F by ELA of PF resin was confirmed. New sharp peaks at 682 and 1906cm(-1) r elated to stretching modes of carbon-iodine and sp carbon-carbon bonds, res pectively, are detected in the I-2-doped PAS-F.