Carrier dynamics in alpha-octithiophene (8T) solids: comparison of the transient photoconductivity and photoinduced absorption in single crystals andpolycrystalline films
D. Moses et al., Carrier dynamics in alpha-octithiophene (8T) solids: comparison of the transient photoconductivity and photoinduced absorption in single crystals andpolycrystalline films, SYNTH METAL, 101(1-3), 1999, pp. 421-424
We demonstrate that the properties of the transient photoconductivity such
as its life time and its dependence on light intensity and electric field (
E) in crystal 8T are radically different from those in 8T oriented polycrys
talline film. Our observations indicate a bimolecular carrier recombination
mechanism prevailing in the 8T crystal, whereas a mono-molecular one opera
tes in the polycrystalline film. The role of the structural defects in the
8T film on the transport is revealed by the deviation from the ohmic behavi
or seen in the 8T crystals into a sublinear dependence of the photocurrent
on E in the polycrystalline film. Our studies reveal relative high photolum
inescence (PL) efficiency and amplified spontaneous emission (ASE) but very
small photoinduced absorption (PA) in the 8T crystal, in contrast to a muc
h smaller FL, broader emission that extends to the near IR, and much higher
PA, leading to the absence of stimulated emission (SE) in the 8T polycryst
alline film. This indicates that disorder in the 8T system introduces new s
tates that allow for radiative transitions in the near IR region as well as
higher transition probability that results in increased PA in the 8T polyc
rystalline film.