Carrier dynamics in alpha-octithiophene (8T) solids: comparison of the transient photoconductivity and photoinduced absorption in single crystals andpolycrystalline films

Citation
D. Moses et al., Carrier dynamics in alpha-octithiophene (8T) solids: comparison of the transient photoconductivity and photoinduced absorption in single crystals andpolycrystalline films, SYNTH METAL, 101(1-3), 1999, pp. 421-424
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
101
Issue
1-3
Year of publication
1999
Pages
421 - 424
Database
ISI
SICI code
0379-6779(199905)101:1-3<421:CDIA(S>2.0.ZU;2-K
Abstract
We demonstrate that the properties of the transient photoconductivity such as its life time and its dependence on light intensity and electric field ( E) in crystal 8T are radically different from those in 8T oriented polycrys talline film. Our observations indicate a bimolecular carrier recombination mechanism prevailing in the 8T crystal, whereas a mono-molecular one opera tes in the polycrystalline film. The role of the structural defects in the 8T film on the transport is revealed by the deviation from the ohmic behavi or seen in the 8T crystals into a sublinear dependence of the photocurrent on E in the polycrystalline film. Our studies reveal relative high photolum inescence (PL) efficiency and amplified spontaneous emission (ASE) but very small photoinduced absorption (PA) in the 8T crystal, in contrast to a muc h smaller FL, broader emission that extends to the near IR, and much higher PA, leading to the absence of stimulated emission (SE) in the 8T polycryst alline film. This indicates that disorder in the 8T system introduces new s tates that allow for radiative transitions in the near IR region as well as higher transition probability that results in increased PA in the 8T polyc rystalline film.