Effects of pressure on the electrical resistivity of iodine-doped polyacetylene

Authors
Matsushita, A Akagi, K Liang, TS Shirakawa, H
Citation
A. Matsushita et al., Effects of pressure on the electrical resistivity of iodine-doped polyacetylene, SYNTH METAL, 101(1-3), 1999, pp. 447-448
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
101
Issue
1-3
Year of publication
1999
Pages
447 - 448
Database
ISI
SICI code
0379-6779(199905)101:1-3<447:EOPOTE>2.0.ZU;2-A
Abstract
We have studied the pressure dependence of the resistivity of undoped polya cetylene and iodine-doped one up to 2 GPa. X-ray diffraction measurement un der high pressure was carried out for undoped polyacetylene. Anisotropy in compression behavior of structure was observed and was found to correspond with the decrease of electrical resisitivty. Also the influence of pressure transmitting medium on the structure was observed. The semiconducting beha vior of iodine-doped polyacetylene was suppressed by pressure but a metalli c temperature dependence was not obtained.