Schottky diodes resulting from an intimate contact of aluminum on electro-d
eposited poly(3-methylthiopene), PMeT, have been studied by admittance spec
troscopy, capacitance-voltage and current-voltage measurements, and optical
ly-induced current transients. The loss-tangents show the existence of inte
rface states that can be removed by vacuum annealing, also visible in the t
ransients. Furthermore, the CV curves don't substantiate the idea of moveme
nt of the dopant ions.