Femtosecond transient absorption spectroscopy in alpha-sexithienyl thin films

Citation
G. Wegmann et al., Femtosecond transient absorption spectroscopy in alpha-sexithienyl thin films, SYNTH METAL, 101(1-3), 1999, pp. 555-556
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
101
Issue
1-3
Year of publication
1999
Pages
555 - 556
Database
ISI
SICI code
0379-6779(199905)101:1-3<555:FTASIA>2.0.ZU;2-I
Abstract
The electroactive and photoactive properties of conjugated systems have att racted the interest of many laboratories, both for a basic understanding of their photophysics as well as for possible applications in organic-based o ptoelectronic devices. alpha-sexithienyl has been recognized as a model com pound for a basic understanding of the electronic properties of conjugated materials. We report on ultrafast pump-probe measurements on ultra-high vac uum deposited thin films of a-sexithienyl. Femtosecond transient spectrosco py experiments were performed at low temperatures and over a wide wavelengt h range of the probe beam (from 420 nm up to 680 nm). The dynamics of the p hotoexcited species are discussed in the frame of the excitonic model.