Charge trapping instabilities of sexithiophene Thin Film Transistors

The charge trapping instabilities of sexithiophene Thin Film Transistors oc curring during device operation, are studied as a function of time and temp erature. These charge trapping instabilities are characterised by a thresho ld voltage shift (Delta V-T) brought about by a stress voltage at the gate contact. The charge carrier mobility remains constant under bias stress and is independent on Delta V-T. The threshold shift is observed to be logarit hmically dependent on time. The decay rate of Delta V-T is thermally activa ted with an activation energy, which is similar to the activated behaviour of the charge carrier mobility, of about 89 meV. The nature of the charge t rapping instabilities is not known at this moment.