One- and two-photon stimulated emission in oligothiophenes single crystals

Citation
D. Fichou et al., One- and two-photon stimulated emission in oligothiophenes single crystals, SYNTH METAL, 101(1-3), 1999, pp. 610-613
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
101
Issue
1-3
Year of publication
1999
Pages
610 - 613
Database
ISI
SICI code
0379-6779(199905)101:1-3<610:OATSEI>2.0.ZU;2-6
Abstract
We report on the observation of stimulated emission (SE) in plane-parallel single crystals of quaterthiophene (4T), sexithiophene (6T) and octithiophe ne (8T) at room temperature. One-photon transverse pumping at normal incide nce induces gain narrowing and leads to two SE lines emerging at respective ly low (50 mu J/cm(2)) and high (500 mu J/cm(2)) pumping levels. Two-photon excitation is realized in a longitudinal geometry, i.e. the near-IR beam o f a Ti:sapphire laser being directed parallel to the crystal faces. Intense and highly directional emission of visible light (green for 4T, orange for 6T and red for 8T) is generated along the pump pathway throughout the crys tal over lengths of several millimeters. Since in the solid state oligothio phenes also possess carrier mobilities as high as 0.1 cm(2)/V.s, they appea r as potential materials in view of an organic laser diode.