Electrcal properties of cyano-substituted oligothiophenes towards n-type organic semiconductors

Citation
F. Demanze et al., Electrcal properties of cyano-substituted oligothiophenes towards n-type organic semiconductors, SYNTH METAL, 101(1-3), 1999, pp. 620-621
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
101
Issue
1-3
Year of publication
1999
Pages
620 - 621
Database
ISI
SICI code
0379-6779(199905)101:1-3<620:EPOCOT>2.0.ZU;2-F
Abstract
The synthesis of cyano end-capped sexithiophene is reported using the palla dium-catalyzed coupling reaction via organotin intermediates. Schottky diod e structures with metal/CN-6T-CN/metal using cyano end-capped sexithiophene and various metals were fabricated by vapour deposition. Electron injectio n and rectification ratio strongly depend on the metal contact which is com patible with the electron affinity materials.