Fullerene-oligophenyl bilayers grown by hot wall epitaxy

Citation
G. Matt et al., Fullerene-oligophenyl bilayers grown by hot wall epitaxy, SYNTH METAL, 101(1-3), 1999, pp. 656-657
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
101
Issue
1-3
Year of publication
1999
Pages
656 - 657
Database
ISI
SICI code
0379-6779(199905)101:1-3<656:FBGBHW>2.0.ZU;2-D
Abstract
In this work we report on thin organic films grown by Hot Wall Epitaxy (HWE ). This technique allows the epitaxial growth close to the thermodynamic eq uilibrium. The growing process strongly depends on the choice of the substr ate and substrate temperature. We produced para-hexaphenyl (PHP) and PHP/C- 60 bilayers by HWE and characterized the samples by polarized luminescence and photocurrent measurements.