Formation of pure thin films by means of self-sputtering deposition

The use of negative ion beams for self-sputtering deposition method has bee n applied as a new and very practical way to obtain highly pure thin films. With this method the sputtering ion beam is composed of the same element t hat composes the target sputtered by this ion beam. The ions for sputtering are not anymore impurities of the film as is the case of conventional sput tering deposition methods where for example argon ions are used as sputteri ng material. Furthermore since the negative ion source does not use any gas es for plasma discharge deposition circumstances can be kept very clean whi ch means a reduction of the inclusion of impurities such as hydrogen or oxy gen in the film. (C) 1999 Elsevier Science S.A. All rights reserved.