The method of low temperature reduction of thin oxide layers in hydrogen pl
asmas is described. Samples made of Fe60Ni40 alloys were picked from the pr
oduction line for housings of electronic devices. During thermal treatment
a layer of brownish oxide was formed on the surface. The thickness of the o
xide layer was estimated from AES depth profiles of the samples and it was
about 30 nm. Samples were fixed on small thermocouples and exposed to hydro
gen plasmas with a density of 8 x 10(15) m(-3); an electron temperature of
6 eV, and the dissociation degree of the hydrogen molecules of 30%. Samples
were treated in hydrogen plasmas for different periods. During the treatme
nt, the temperature of samples was raised to about 185 degrees C, then was
dropped to 30 degrees C, and then remained constant for as long as the RF g
enerator was on. The appearance of the maximum temperature coincided with t
he change of the sample colour. After plasma treatment, the samples were an
alyzed with AES. Depth profiles of the samples exposed to the plasma for le
ss than 17 s showed hardly any change in surface composition. The AES depth
profiles of samples exposed to plasmas for more than 20 a, however, showed
no presence of oxygen. The composition of the surface layer was the same a
s that of the bulk material, 60% iron and 40% nickel. Complete reduction of
the oxide layer on the samples therefore occurred in a short time (less th
an 3 s) after 17 s exposure of the samples to the hydrogen plasma. (C) 1999
Elsevier Science S.A. All rights reserved.