Residual stress in TiN film deposited by arc ion plating

Citation
T. Matsue et al., Residual stress in TiN film deposited by arc ion plating, THIN SOL FI, 344, 1999, pp. 257-260
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
344
Year of publication
1999
Pages
257 - 260
Database
ISI
SICI code
0040-6090(199904)344:<257:RSITFD>2.0.ZU;2-Q
Abstract
TiN films were deposited on aluminum and stainless steel substrates by are ion plating (AIP). Bias voltages, nitrogen gas pressures and are currents w ere changed to examine their role on the hardness and residual stress of a TiN film. Vickers microhardness tests revealed high hardness value (HV = 22 50-2500) which depends on both nitrogen gas pressures and are currents. Fro m the X-ray diffraction pattern, it was found that the crystal orientation of the TiN film markedly varied with the bias voltage. Residual stresses in the TiN film were measured by the two-exposure X-ray stress analysis as a function of the nitrogen gas pressure, are current. Very high compressive r esidual stresses, -5 GPa in the films on aluminum substrates and -7 GPa in the film on a stainless steel substrate, were observed. (C) 1999 Elsevier S cience S.A. All rights reserved.