ZnS wide band gap semiconductor thin film electronic structure sensitivityto Mn impurity

In this work the Mn influence on X-ray photoelectron Zn 2p and S 2p spectra of ZnS thin films with low Mn concentration have been studied. The careful analysis of Zn 2p and S 2p spectra shows that the Mn impurity in concentra tion less than sensitivity limit of XPS leads to the decreasing binding ene rgy for Zn 2p electrons on 0.3 eV and for S 2p electrons on 0.6 eV. It was explained by elementary Zn clusters formation for similar to 7 at.% of Zn a toms and by changing the Zn-S-Zn groups on the Mn-S-Mn groups for similar t o 5 at.% of S atoms. (C) 1999 Elsevier Science S.A. All rights reserved.