Effects of plasma etching on DLC films

Citation
M. Massi et al., Effects of plasma etching on DLC films, THIN SOL FI, 344, 1999, pp. 381-384
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
344
Year of publication
1999
Pages
381 - 384
Database
ISI
SICI code
0040-6090(199904)344:<381:EOPEOD>2.0.ZU;2-2
Abstract
Magnetron sputtered diamond like carbon (DLC) films were etched in oxygen r eactive ion etching (RIE) plasmas. The hydrogenated films etch 35% slower t han the non-hydrogenated films. Etch rates increase with power. The anisotr opy decreases with both pressure and power. Processes at 6.5 Pa yield aniso tropies of over 0.9, with etch rates up to 185 nm/min for the hydrogenated films. Raman analysis indicates that these oxygen RIE processes etch prefer entially non-crystalline carbon atoms in the hydrogenated films, the remain ing film has more sp bound carbon atoms than the original DLC film. This ph enomenon occurs in a much lesser degree for the non-hydrogenated films, and Raman analysis indicates that the sp(2)-bound carbon atoms etch at approxi mately the same rate as the non-crystalline bound atoms. (C) 1999 Elsevier Science S.A. All rights reserved.