Oxidation kinetics of hydrogen-enriched Si(100) and Si(111) surfaces

Hydrogen-enriched Si(100) and Si(lll) wafers were thermally oxidized and th e growth kinetics were studied by measuring the thickness and the refractiv e index of the oxide. The oxidation was performed in dry oxygen at temperat ures of 800, 845 and 855 degrees C. Prior to oxidation the Si surfaces were hydrogen-enriched by hydrogenation in hydrogen plasma in a planar r.f. uni t. The substrates were kept at the lower electrode without heating or at a temperature of 100 degrees C. In the investigated thickness range of 40-200 Angstrom the growth was linear with time. The rate constant was smaller an d the zero time thickness higher (as obtained from the fit of the experimen tal points) as compared with the case of the Si surface with wet RCA preoxi dation clean only. A discussion on the role of the hydrogen in oxide growth mechanisms is included. (C) 1999 Elsevier Science S.A. All rights reserved .