Low temperature growth of p-type crystalline silicon films by ECR plasma CVD

Authors
Wang, LC Reehal, HS
Citation
Lc. Wang et Hs. Reehal, Low temperature growth of p-type crystalline silicon films by ECR plasma CVD, THIN SOL FI, 344, 1999, pp. 571-574
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
344
Year of publication
1999
Pages
571 - 574
Database
ISI
SICI code
0040-6090(199904)344:<571:LTGOPC>2.0.ZU;2-#
Abstract
We report on the growth of thick (up to 4 mu m) p-type crystalline silicon films on silicon from silane using the technique of electron cyclotron reso nance (ECR) plasma-assisted chemical vapour deposition (PACVD) at temperatu res <700 degrees C. Epitaxial growth was obtained at similar to 680 degrees C for growth rates in the region of 25 nm/min. At lower temperatures the f ilms are microcrystalline with varying degrees of crystallinity depending o n growth conditions. (C) 1999 Elsevier Science S.A. All rights reserved.