We report on the growth of thick (up to 4 mu m) p-type crystalline silicon
films on silicon from silane using the technique of electron cyclotron reso
nance (ECR) plasma-assisted chemical vapour deposition (PACVD) at temperatu
res <700 degrees C. Epitaxial growth was obtained at similar to 680 degrees
C for growth rates in the region of 25 nm/min. At lower temperatures the f
ilms are microcrystalline with varying degrees of crystallinity depending o
n growth conditions. (C) 1999 Elsevier Science S.A. All rights reserved.