Growth of GaAs1-xNx on GaAs(100) by chemical beam epitaxy

GaAs1-xNx films have been grown using chemical beam epitaxy (CBE). Triethyl gallium, As-2 and atomic nitrogen generated in an electron cyclotron resona nce plasma were used as the Ga, As and N sources, respectively. The maximum nitrogen content in GaAs1-xNx obtained in this study was x = 0.026. As a s upplemental method to secondary ion mass spectrometry and X-ray diffraction techniques for measuring the nitrogen fraction, we present preliminary res ults from transmission electron microscopy studies which involved the use o f microdiffraction and electron energy loss spectroscopy to probe local reg ions of the films. (C) 1999 Elsevier Science S.A. All rights reserved.