AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

An AlGaInP/AuBe/glass light-emitting diode (LED) was fabricated by a wafer bonding technique. The AlGaInP LED was grown on a temporary GaAs substrate by metalorganic vapor phase epitaxy. By bonding the AuBe/glass substrate on top of epitaxial layers, the temporary GaAs substrate was removed. The lum inance of this wafer-bonded device is about 3050 cd/m(2) (600 nm wavelength ) at an operating current of 20 mA. It is about three times brighter than a conventional device with an absorbing GaAs substrate. This could be due to the fact that the AuBe/glass substrate serves as a reflective mirror, impr oving the light extraction efficiency. (C) 1999 American Institute of Physi cs. [S0003-6951(99)00928-6].