Organic light-emitting diodes with a bipolar transport layer

Citation
Ve. Choong et al., Organic light-emitting diodes with a bipolar transport layer, APPL PHYS L, 75(2), 1999, pp. 172-174
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
2
Year of publication
1999
Pages
172 - 174
Database
ISI
SICI code
0003-6951(19990712)75:2<172:OLDWAB>2.0.ZU;2-0
Abstract
A structure based on a bipolar transport/emitting layer is proposed and imp lemented for making organic light-emitting diodes. Compared to the conventi onal heterojunction organic light-emitting diodes, more than a factor of si x improvement in device reliability (a projected operating lifetime of 70 0 00 h) is achieved in the structure. The significant improvement in device l ifetime is attributed to the elimination of the heterointerface present in the conventional devices which greatly affects the device reliability. (C) 1999 American Institute of Physics. [S0003-6951(99)04324-7].