Molecular beam epitaxial growth of InGaAsN : Sb/GaAs quantum wells for long-wavelength semiconductor lasers

InGaAsN:Sb/GaAs quantum wells (QWs) were grown by solid-source molecular be am epitaxy using a N-2 radio-frequency plasma source. Photoluminescence rev eals an enhancement in the optical properties of InGaAsN/GaAs QWs by the in troduction of Sb flux during growth. X-ray diffraction and reflection high- energy electron diffraction analyses indicate that Sb acts as a surfactant. This technique was used to improve the performance of long-wavelength InGa AsN laser diodes. A low-threshold current density of 520 A/cm(2) was achiev ed for an InGaAsN:Sb/GaAs single quantum well 1.2 mu m laser diode at room temperature under pulsed operation. (C) 1999 American Institute of Physics. [S0003-6951(99)00727-5].