Patterning of highly oriented pyrolytic graphite by oxygen plasma etching

Authors
Lu, XK Huang, H Nemchuk, N Ruoff, RS
Citation
Xk. Lu et al., Patterning of highly oriented pyrolytic graphite by oxygen plasma etching, APPL PHYS L, 75(2), 1999, pp. 193-195
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
2
Year of publication
1999
Pages
193 - 195
Database
ISI
SICI code
0003-6951(19990712)75:2<193:POHOPG>2.0.ZU;2-A
Abstract
Patterning of highly oriented pyrolytic graphite (HOPG) was demonstrated by oxygen plasma etching of lithographically patterned substrates. Periodic a rrays of islands, or holes of several microns on an edge, were obtained on freshly cleaved HOPG surfaces which had been prepared with SiO2 mask stops and then oxygen plasma etched. The etching process is described, including a study of etch rate as a function of rf power, and morphology was characte rized with scanning electron microscopy. (C) 1999 American Institute of Phy sics. [S0003-6951(99)03628-1].