Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots

Citation
Jc. Kim et al., Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots, APPL PHYS L, 75(2), 1999, pp. 214-216
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
2
Year of publication
1999
Pages
214 - 216
Database
ISI
SICI code
0003-6951(19990712)75:2<214:TMOICS>2.0.ZU;2-M
Abstract
We use micro- and nano-photoluminescence to study the temperature-dependent excitonic emission from CdSe quantum dots embedded in a ZnSe matrix. By va rying the spatial resolution from 200 nm to 1.7 mu m, we are able to study the temperature dependence of the ultranarrow (similar to 200 mu eV) emissi on from excitons confined to single quantum dots, as well as statistical en sembles of up to 200 dots. By measuring the quenching of the photoluminesce nce (PL) with temperature, we find compelling evidence that the PL emission from these samples results from two different kinds of states. Similar to previous work, we find that a broad PL line persists to 300 K with an activ ation energy of similar to 40 meV. However, we find that the ultranarrow li nes are quenched at about 60 K, indicating an effective activation energy o f only 4.0 meV. (C) 1999 American Institute of Physics. [S0003-6951(99)0122 8-0].