We use micro- and nano-photoluminescence to study the temperature-dependent
excitonic emission from CdSe quantum dots embedded in a ZnSe matrix. By va
rying the spatial resolution from 200 nm to 1.7 mu m, we are able to study
the temperature dependence of the ultranarrow (similar to 200 mu eV) emissi
on from excitons confined to single quantum dots, as well as statistical en
sembles of up to 200 dots. By measuring the quenching of the photoluminesce
nce (PL) with temperature, we find compelling evidence that the PL emission
from these samples results from two different kinds of states. Similar to
previous work, we find that a broad PL line persists to 300 K with an activ
ation energy of similar to 40 meV. However, we find that the ultranarrow li
nes are quenched at about 60 K, indicating an effective activation energy o
f only 4.0 meV. (C) 1999 American Institute of Physics. [S0003-6951(99)0122
8-0].