High-quality highly strained InGaAs quantum wells grown on InP using (InAs)(n)(GaAs)(0.25) fractional monolayer superlattices

Authors
Jourba, S Gendry, M Marty, O Pitaval, M Hollinger, G
Citation
S. Jourba et al., High-quality highly strained InGaAs quantum wells grown on InP using (InAs)(n)(GaAs)(0.25) fractional monolayer superlattices, APPL PHYS L, 75(2), 1999, pp. 220-222
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
2
Year of publication
1999
Pages
220 - 222
Database
ISI
SICI code
0003-6951(19990712)75:2<220:HHSIQW>2.0.ZU;2-K
Abstract
(InAs)(n)/(GaAs)(m) (n =1.5-2, m = 0.25 monolayer) fractional monolayer sup erlattices (FMS) have been used to grow highly strained InGaAs quantum well s (QWs) on InP by molecular beam epitaxy. We show that FMS quantum wells ha ve better structural and optoelectronic properties compared to equivalent Q Ws grown using standard procedures. In addition, the onsets of the three-di mensional growth mode and plastic relaxation are delayed, which allows the highest emission wavelength in the InxGa1-xAs/InGaAlAs/InP system to be ext ended up to 2.35 mu m at high growth temperatures (500 degrees C). (C) 1999 American Institute of Physics. [S0003-6951(99)00228-4].