Measurement of AlInAsSb GaInAsSb heterojunction band offset by photoluminescence spectroscopy

Authors
Chang, JR Su, YK Lin, CL Wu, KM Huang, WC Lu, YT Jaw, DH Li, WL Chen, SM
Citation
Jr. Chang et al., Measurement of AlInAsSb GaInAsSb heterojunction band offset by photoluminescence spectroscopy, APPL PHYS L, 75(2), 1999, pp. 238-240
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
2
Year of publication
1999
Pages
238 - 240
Database
ISI
SICI code
0003-6951(19990712)75:2<238:MOAGHB>2.0.ZU;2-5
Abstract
We have grown unstrained Al0.66In0.34As0.85Sb0.15/Ga0.64In0.36As0.84Sb0.16 multiple-quantum-well (MQW) structures on InP substrates by metalorganic va por phase epitaxy. Low-temperature photoluminescence was performed for thes e MQW structures. By comparing the luminescence peak energies with the theo retical calculations, we estimated the conduction-band offset ratio to be 0 .75 +/- 0.10 for the Al0.66In0.34As0.85Sb0.15/Ga0.64In0.36As0.84Sb0.16 hete rostructure. (C) 1999 American Institute of Physics. [S0003-6951(99)02528-0 ].