Quantum-well width dependence of threshold current density in InGaN lasers

Authors
Chow, WW Amano, H Takeuchi, T Han, J
Citation
Ww. Chow et al., Quantum-well width dependence of threshold current density in InGaN lasers, APPL PHYS L, 75(2), 1999, pp. 244-246
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
2
Year of publication
1999
Pages
244 - 246
Database
ISI
SICI code
0003-6951(19990712)75:2<244:QWDOTC>2.0.ZU;2-A
Abstract
The quantum-confined Stark effect was found to result in a strong quantum-w ell width dependence of threshold current density in strained group-III nit ride quantum well lasers. For an In0.2Ga0.8N/GaN structure with quantum-wel l width in the neighborhood of 3.5 nm, our analysis shows that the reductio n in spontaneous emission loss by the electron-hole spatial separation outw eighs the corresponding reduction in gain to produce a threshold current-de nsity minimum. (C) 1999 American Institute of Physics. [S0003-6951(99)04328 -4].