Photoluminescence from porous structures prepared by anodization of annealed Cz-Si

Authors
Surma, B Wnuk, A Misiuk, A Brzozowski, A Pawlowska, M Franz, M Jun, J Rozental, M Nossarzewska-Orlowska, E
Citation
B. Surma et al., Photoluminescence from porous structures prepared by anodization of annealed Cz-Si, CRYST RES T, 34(5-6), 1999, pp. 689-697
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
34
Issue
5-6
Year of publication
1999
Pages
689 - 697
Database
ISI
SICI code
0232-1300(1999)34:5-6<689:PFPSPB>2.0.ZU;2-G
Abstract
The process of porous silicon, preparation from p-type Czochralski grown si licon,CZ-Si, subjected to different preanneal proceses was studied. It was found that defects generated by oxygen precipitation in the Ct-Si substrate s can markedly influence the porous silicon preparation. Enhanced hydrostat ic pressure of gas ambient during annealing of Ct-Si at 1350 degrees C lead s to the generation of some extended defects in Ct-Si which affect photolum inescence from porous silicon obtained from such substrates. A relation bet ween the concentration of defects in the Ct-Si substrates and the porous si licon structure and its photoluminescence was observed. Dependence of photo luminescence and porous silicon structure on the kind and concentration of oxygen related defects in the Ct-Si substrate was found.