Growth of GaN single crystals under high nitrogen pressures and their characterization

The present paper reviews presentation of the present status of high pressu re solution growth of GaN single crystals and their characterization. The m ain aspects of the growth include: the thermodynamic properties of the syst em, the kinetic description of the growth which include the N-2 dissolution , the volume transport and the surface kinetics. The important properties o f GaN crystals derived from optical, x-ray, electron transport and positron annihilation measurements are presented. Also etching properties and their relation to the growth morphology and doping are discussed.