Morphology of chemical vapor deposition diamond particles grown at high temperature

Authors
Citation
Kw. Chae et Yj. Baik, Morphology of chemical vapor deposition diamond particles grown at high temperature, DIAM RELAT, 8(7), 1999, pp. 1261-1266
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
8
Issue
7
Year of publication
1999
Pages
1261 - 1266
Database
ISI
SICI code
0925-9635(199907)8:7<1261:MOCVDD>2.0.ZU;2-9
Abstract
{113} facets and irregular shapes of chemical vapor deposition (CVD) diamon d particles are observed at high deposition temperature of 1200 degrees C o n Co base substrate. Microwave plasma CVD is used for the diamond depositio n with 2 percent of methane in hydrogen under 1.2 x 10(4) Pa (90 Torr). {11 3} facets form between {100} and {111} facets of diamond particles grown on heterogeneous substrate. This verifies that the condition for the stable { 113} facet exists in CVD diamond growth. New small angle boundaries evolve on a flat surface of a growing single crystal diamond particle. Solid segme nts surrounded by the boundaries look like new grains, whose lattice orient ations are misoriented to each other. The misorientation between the solid segments is small initially, but increases as the growth proceeds. Such evo lution appears only on the upper particle surface which is parallel to the substrate surface irrespective of the facet index. The formation mechanism of the solid segments is discussed in terms of the lattice misfit within th e diamond particle. (C) 1999 Elsevier Science S.A. All rights reserved.