Very high power 1.48 rho m semiconductor lasers

Authors
Mathur, A Fisher, M Ziari, M Hagberg, M Kolev, E
Citation
A. Mathur et al., Very high power 1.48 rho m semiconductor lasers, ELECTR LETT, 35(12), 1999, pp. 983-985
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
12
Year of publication
1999
Pages
983 - 985
Database
ISI
SICI code
0013-5194(19990610)35:12<983:VHP1RM>2.0.ZU;2-7
Abstract
1.38 mu m semiconductor diode laser structures with very high CW output pow er levels have been developed. Over 3.2W from broad area lasers, record pow er of 410mW from narrow stripe single mode lasers and record 1.8W diffracti on limited power from flared lasers have been obtained.