Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content

Authors
Tsujimura, A Hasegawa, Y Ishibashi, A Kamiyama, S Kidoguchi, I Miyanaga, R Suzuki, M Kume, M Harafuji, K Ban, Y
Citation
A. Tsujimura et al., Room-temperature continuous-wave operation of GaInN multiquantum well laser diodes with low indium content, ELECTR LETT, 35(12), 1999, pp. 998-999
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
12
Year of publication
1999
Pages
998 - 999
Database
ISI
SICI code
0013-5194(19990610)35:12<998:RCOOGM>2.0.ZU;2-Z
Abstract
Based on the indium content dependence of optical gain in a GaInN multiquan tum well (MQW) structure, room-temperature continuous-wave operation of GaI nN MQW laser diodes is demonstrated. Amplified spontaneous emission spectra for Ga1-xInxN (x = 0.07 - 0.11) MQWs suggest that lower indium content lea ds to smaller bandgap inhomogeneity and an improvement in the laser perform ance. Ga0.93In0.07N MQW laser diodes were operated with a threshold current density of 11kA/cm(2).