Smart-Cut (R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films

Authors
Aspar, B Jalaguier, E Mas, A Locatelli, C Rayssac, O Moriceau, H Pocas, S Papon, AM Michaud, JF Bruel, M
Citation
B. Aspar et al., Smart-Cut (R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films, ELECTR LETT, 35(12), 1999, pp. 1024-1025
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
12
Year of publication
1999
Pages
1024 - 1025
Database
ISI
SICI code
0013-5194(19990610)35:12<1024:S(PUMB>2.0.ZU;2-R
Abstract
The ability to obtain thin films using the Smart-Cut(R) process combined wi th metallic bonding is demonstrated. New structures have been realised from thin films of Si, GaAs or InP bonded to silicon substrates via metallic la yers.