Localization and dephasing driven by magnetic fluctuations in low carrier density colossal magnetoresistance materials

Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We c laim the existence of the "mobility edge", which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the "mobility edge" crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in fer romagnetic semiconductors and manganite pyrochlores.