Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

Citation
A. Brataas et al., Non-equilibrium spin accumulation in ferromagnetic single-electron transistors, EUR PHY J B, 9(3), 1999, pp. 421-430
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL B
ISSN journal
14346028 → ACNP
Volume
9
Issue
3
Year of publication
1999
Pages
421 - 430
Database
ISI
SICI code
1434-6028(199906)9:3<421:NSAIFS>2.0.ZU;2-1
Abstract
We study transport in ferromagnetic single-electron transistors. The non-eq uilibrium spin accumulation on the island caused by a finite current throug h the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the ti me-dependent transport properties. A transient decay of the spin accumulati on may reverse the electric current on time scales of the order of the spin -flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation.