Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET's

Authors
Chen, TP Chan, R Fung, S Lo, KF
Citation
Tp. Chen et al., Reproducibility of transmission line measurement of bipolar I-V characteristics of MOSFET's, IEEE INSTR, 48(3), 1999, pp. 721-723
Citations number
5
Categorie Soggetti
Instrumentation & Measurement
Journal title
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
ISSN journal
00189456 → ACNP
Volume
48
Issue
3
Year of publication
1999
Pages
721 - 723
Database
ISI
SICI code
0018-9456(199906)48:3<721:ROTLMO>2.0.ZU;2-S
Abstract
Reproducibility of transmission line (TL) measurement of bipolar current-vo ltage (I-V) characteristics of grounded gate MOSFET's has been examined. It is observed that the reproducibility is related to the duration of the pul ses generated by the transmission line, and a longer pulse duration gives a better reproducibility. For a short pulse duration, it is more difficult t o reproduce the I-V characteristics in the triggering region than in other regions (i.e., the pretriggering and snapback regions).