Recent Sears have seen great advances in our understanding and modeling of
the coupled diffusion of dopants and defects: in silicon during integrated
circuit fabrication processes. However, the ever-progressing shrinkage of d
evice dimensions and tolerances leads to new problems and a need for even b
etter models. In this review, we address some of the advances in the unders
tanding of defect-mediated diffusion, focusing on the equations and paramet
ers appropriate for modeling of dopant diffusion in submicron structures.