Modeling of dopant diffusion in silicon

Recent Sears have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects: in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of d evice dimensions and tolerances leads to new problems and a need for even b etter models. In this review, we address some of the advances in the unders tanding of defect-mediated diffusion, focusing on the equations and paramet ers appropriate for modeling of dopant diffusion in submicron structures.