Modeling of channel boron distribution in deep sub-0.1 mu m n-MOSFETs

This paper reports the evaluation results of the channel boron distribution in the deep sub-0.1 [mu m] n-MOSFETs for the first time. It has been found that the boron depletion effect becomes dominant and the reverse short cha nnel effect becomes less significant in the deep sub-0.1[mu m] n-MOSFETs. I t has been also found that the sheet charge distribution responsible for th e reverse short channel effect is localized within a distance of 100 [nm] f rom the source/drain-extension junction.