Inverse modeling and its application to MOSFET channel profile extraction

We propose a new inverse modeling method tu extract 2D channel dopant profi le in an MOSFET. The profile is extracted from threshold voltage (Vth) of M OSFETs with a series of gate lengths. The uniqueness of the extracted chann el and drain profile is confirmed through lest simulations. The extracted p rofile of actual 0.1 mu m MOSFETs explains reverse short channel effects (R SCE) of threshold voltage dependent on gate length including substrate Lias dependence.