2-dimensional simulation of FN current suppression including phonon assisted tunneling model in silicon dioxide

Authors
Eikyu, K Sakakibara, K Ishikawa, K Nishimura, T
Citation
K. Eikyu et al., 2-dimensional simulation of FN current suppression including phonon assisted tunneling model in silicon dioxide, IEICE TR EL, E82C(6), 1999, pp. 889-893
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E82C
Issue
6
Year of publication
1999
Pages
889 - 893
Database
ISI
SICI code
0916-8524(199906)E82C:6<889:2SOFCS>2.0.ZU;2-D
Abstract
A gate oxide excess current model is described based on the phonon-assisted tunneling process of electrons into neutral traps. The influence on local electric field of charge of electrons trapped by neutral traps in gate oxid e is simulated using a two-dimensional device simulator into which the new model is incorporated. FN current is suppressed with an increase in the neu tral trap density to over 10(19) cm(-3) The calculated results reflect the endurance characteristics of flash memories in which erase/write operation speed depends on FN current.