Worst best device and circuit performances for MOSFETs determined from process fluctuations

Authors
Prigge, O Suetake, M Miura-Mattausch, M
Citation
O. Prigge et al., Worst best device and circuit performances for MOSFETs determined from process fluctuations, IEICE TR EL, E82C(6), 1999, pp. 997-1002
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E82C
Issue
6
Year of publication
1999
Pages
997 - 1002
Database
ISI
SICI code
0916-8524(199906)E82C:6<997:WBDACP>2.0.ZU;2-U
Abstract
Fluctuations of three device parameters (T-ox, N-sub, Delta L) based on pro cess fluctuations are taken as cause of device/circuit performances. In-lin e measured device parameters are approximated by Gaussian functions; and th eir 2 sigma values are assigned as boundaries of the performance fluctuatio ns. Measured distributions both Fur device and curcuit performances are suc cessfully reproduced.