Electroluminiscence (EL) in liquid of porous silicon (PS) has been attribut
ed to radiative recombination of electrochemically generated holes from the
bulk of the semiconductor and electrons injected into the conduction band
of PS by species adsorbed on the surface. An examination of the surface of
PS submitted to oxidation by means of Fourier Transform Infrared Spectrosco
py indicates that the concentration of Sx-H-x bonds does not significantly
vary during the time interval in which EL is recorded, and therefore that t
he electrons belonging to the Si-H bonds do not intervene in the generation
of EL. (C) 1999 Kluwer Academic Publishers.