Interfacial tunnel-type GMR in granular perovskite La1-xSrxMnO3

Authors
Zhang, N Zeng, MY Ding, WP Zhong, W Du, YW
Citation
N. Zhang et al., Interfacial tunnel-type GMR in granular perovskite La1-xSrxMnO3, J MAT SCI T, 15(4), 1999, pp. 373-374
Citations number
10
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN journal
10050302 → ACNP
Volume
15
Issue
4
Year of publication
1999
Pages
373 - 374
Database
ISI
SICI code
1005-0302(199907)15:4<373:ITGIGP>2.0.ZU;2-O
Abstract
The spin-dependent interfacial tunneling and the corresponding tunnel-type magnetoresistance (TMR) have been observed in granular perovskite La1-xSrxM nO3 with x from 0.05 to 0.45. Study shows that the interfacial tunneling or iginates from the magnetic difference between the grain core and the surfac e, and the TMR stems from the field-induced change of magnetic order in the interface.