Citation
Xw. Zhang et al., Electronic defects of boron-doped fullerene, J MAT SCI T, 15(4), 1999, pp. 380-380
Citations number
3
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN journal
10050302
→ ACNP
Volume
15
Issue
4
Year of publication
1999
Pages
380 - 380
Database
ISI
SICI code
1005-0302(199907)15:4<380:EDOBF>2.0.ZU;2-E
Abstract
The ESR characteristics of boron-doped fullerene prepared by are vaporizati
on of B2O3 powder and graphite in a helium ambient are investigated for the
first time. It is found that the obtained ESR spectrum of boron-doped full
erene is attributed to two components with the same g value of around 2.002
5.