Si-based multielement thin film prepared by r.f. reactive sputtering at room temperature

a-Si:C:N:H thin films have been deposited at room temperature by r.f. react ive-sputtering of a Si target in an Ar+H-2+N-2+CH4 gas mixture. Fourier tra nsform infrared-absorption spectroscopy and optical absorption spectra have been investigated for the films. The study shows that the film structure a nd optical, electrical properties are obviously modified readily by control ling the process parameters of deposition. The nitrogen-rich a-Si:C:N:H fil ms are thermally stable within the temperature ranging from 200 to 800 degr ees C. They are of interest for the potential applications in electronic de vices.