Interfacial structure of nanocrystalline SnO2 and SiO2-doped SnO2

Authors
Wu, YC Zheng, YF Lin, DM Su, AG
Citation
Yc. Wu et al., Interfacial structure of nanocrystalline SnO2 and SiO2-doped SnO2, J MAT SCI T, 15(4), 1999, pp. 388-388
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN journal
10050302 → ACNP
Volume
15
Issue
4
Year of publication
1999
Pages
388 - 388
Database
ISI
SICI code
1005-0302(199907)15:4<388:ISONSA>2.0.ZU;2-T
Abstract
The study of nanocrystalline SnO2 (n-SnO2) and SiO2-doped SnO2 (n-Si-SnO2) samples prepared by the sol-gel process showed that SiO2 doping can effecti vely restrained the growth of nanocrystalline SnO2 grains, thus improving t hermal stability of the materials.