Enhanced electron-electron interaction, weak localization and electron-magnon scattering contributions to electrical resistivity in Fe- and Co-based metallic glass wires

Citation
S. Srinivas et al., Enhanced electron-electron interaction, weak localization and electron-magnon scattering contributions to electrical resistivity in Fe- and Co-based metallic glass wires, J NON-CRYST, 248(2-3), 1999, pp. 211-223
Citations number
49
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
248
Issue
2-3
Year of publication
1999
Pages
211 - 223
Database
ISI
SICI code
0022-3093(199906)248:2-3<211:EEIWLA>2.0.ZU;2-T
Abstract
An extensive analysis of high-precision electrical resistivity (rho) data t aken on Fe- and Co- based metallic glass wires over the temperature range 1 0 K less than or equal to T less than or equal to 300 K and discussion of t he results, so obtained, in terms of the existing theoretical models identi fies enhanced electron-electron interaction (EEI), weak localization (WL) a nd electron-magnon (EM) scattering as the main mechanisms governing the tem perature dependence of rho in these systems and determines their relative m agnitudes accurately. Out of the inelastic processes that destroy phase coh erence, inelastic electron-phonon scattering turns out to be the most effec tive one and its dephasing action persists to temperatures as high as 300 K . While EEI and WL effects are basically responsible for the negative tempe rature coefficient of resistivity (TCR), EM scattering accounts for the pos itive TCR. The observed resistivity minima are thus an outcome of these com peting contributions to rho(T). (C) 1999 Elsevier Science B.V. All rights r eserved.