XAFS studies of Al/TiNx films on Si(100) at the Al K- and L-3,L-2-edge

The effect of annealing on Al diffusion through a TIN, barrier on a Si(100) wafer has been studied with Al K-edge and L-3,L-2-edge absorption spectros copy as a function of annealing temperature (400 degrees C - 600 degrees C) . It is found that there is a noticeable change at high temperatures in the Al K- and L-3,L-2-edge spectra as the temperature increases. This observat ion is attributed to the formation of a stable protective surface oxide. Fl uorescence yield shows that most of the Al metal remains intact after annea ling.