XANES study of the electronic structure of molten germanium

Based on measured XANES spectra of crystalline and liquid germanium(c-Ge an d l-Ge), multiple scattering (MS) simulation and density of states (DOS) se lf-consistent calculation using the configurations generated with reverse M onte Carlo (RMC) simulation for l-Ge have been carried out to study the ele ctronic structures near the Fermi level E-l of l-Ge. The strong white line for l-Ge is attributed to the high DOS in the conduction band and partially to the excitonic effect. The DOS of l-Ge is quite high around Es, as in a metal, while that for c-Ge opens a gap there. Taking the core hole effect i nto account, the p-like partial DOS of the absorbing atom shows a DOS "pili ng up".